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| VUB 60 Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 Type VRRM = 1200-1600 V IdAVM = 70 A 45 12 67 Symbol VRRM IdAV IdAVM IFSM I2t Test Conditions Maximum Ratings 1200 / 1600 59 70 530 475 1400 1130 49 1200 20 31 23 21 62 70 1200 8 12 90 75 60 22 -40...+150 150 -40...+125 Module 9 10 Rectifier Diodes TH = 110C, sinusoidal 120 limited by leads TVJ = 45C, t = 10 ms, VR = 0 V TVJ = 150C, t = 10 ms, VR = 0 V TVJ = 45C, t = 10 ms, VR = 0 V TVJ = 150C, t = 10 ms, VR = 0V TH = 80C per diode TVJ = 25C to 150C Continuous TH = 25C, DC TH = 70C, DC TH = 80C, DC tp = Pulse width limited by TVJM V A A A A A A W Features q q q q q q Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheel diode Convenient package outline UL registered E 72873 Thermistor Ptot VCES VGE IC25 IC70 IC80 ICM Ptot Fast Recovery Diode IGBT Applications V V A A A A W V A A A A A W C C C V~ V~ Nm lb.in. g q Drive Inverters with brake system Advantages q q q q TH = 80C TH = 80C, rectangular d = 0.5 TH = 80C, rectangular d = 0.5 TH = 80C, tP = 10 s, f = 5 kHz TVJ = 45C, t = 10 ms TVJ = 150C, t = 10 ms TH = 80C q VRRM IFAV IFRMS IFRM IFSM 2 functions in one package No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability Dimensions in mm (1 mm = 0.0394") Ptot TVJ TVJM Tstg VISOL Md Weight 50/60 Hz IISOL 1 mA Mounting torque typ. t = 1 min t=1s (M5) (10-32 unf) 3000 3600 2-2.5 18-22 35 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-4 VUB 60 Symbol Test Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 0.1 3 1.3 mA mA V IF 80 A 70 typ. 60 TVJ= 25C 50 40 max. 30 20 10 0 0.0 TVJ=150C VF VT0 rT RthJH VBR(CES) VGE(th) IGES ICES VCEsat Rectifier Diodes Rectifier Diodes IR VR = VRRM, VR = VRRM, IF = 25 A, TVJ = 25C TVJ = 150C TVJ = 25C For power-loss calculations only TVJ = 150C per diode VGS = 0 V, IC = 3 mA IC = 10 mA VGE = 20 V TVJ = 25C, VCE = 800 V TVJ = 125C, VCE = 800 V VGE = 15 V, IC = 25 A 1200 5 0.85 V 8.5 mW 1.42 K/W V V nA mA mA V ms IFSM 7.5 500 250 1 3.5 10 0.5 1.0 VF 1.5 V 2.0 Fig. 1 Forward current versus voltage drop per rectifier diode 500 A 400 VR= 0.8VRRM (SCSOA) IGBT tSC RBSOA VGE = 15 V, VCE = 600 V, TVJ = 125C, RG = 4.7 W, non repetitive VGE = 15 V, VCE = 800 V, TVJ = 125C, RG = 4.7 W, Clamped Inductive load, L = 100 mH VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 600 V, IC = 25 A VGE = 15 V, RG = 4.7 W Inductive load; L = 100 mH TVJ = 125C 2.85 100 220 1600 3.5 12 300 50 A 200 TVJ= 45C Cies td(on) td(off) tfi Eon Eoff RthJH IR VF VT0 rT IRM trr RthJH R25 dS dA a Module NTC nF ns ns ns mJ mJ 1 K/W 100 TVJ= 150C 0 0.001 0.01 t 0.1 s 1 Fig. 2 Surge overload current per rectifier diode 10000 VR= 0 V VR VR Fast Recovery Diode = VRRM, TVJ = 25C = 800 V, TVJ =150C = 12 A, TVJ = 25C 0.2 6 2.7 mA mA V IF A2s For power-loss calculations only TVJ = 150C IF VR IF VR = 25 A, -diF/dt = 100 A/ms = 100 V = 1 A, = 30 V -diF/dt = 100 A/ms 6.5 1.65 V 46 mW 7 A I2t 1000 TVJ= 45C TVJ= 150C 100 50 70 ns 3.12 K/W Siemens Typ S 891/2,2k/+9 Creep distance on surface Strike distance in air Maximum allowable acceleration 2.2 kW 10 1 t ms 10 12.7 mm 9.4 mm 50 m/s2 Fig. 3 I2t versus time per rectifier diode (c) 2000 IXYS All rights reserved 2-4 VUB 60 140 W 120 100 Ptot 80 60 40 20 0 0 10 20 30 Id(AV)M 40 50 60 A 0 70 40 TA 80 120 C 160 80 A 70 RthHA [K/W] 0.5 1 1.5 2 3 4 6 60 Id(AV)M 50 40 30 20 10 0 0 40 80 T TH 120 C 160 H Fig. 4 Power dissipation versus direct output current and ambient temperature (Rectifier bridge) Fig. 5 Maximum forward current versus heatsink temperature (Rectifier bridge) 2.0 T =125C Eoff VJ RG = 4.7W t fi 100 A 80 IC 60 TVJ = 25C VGE = 15V 1.4 VCE(sat) 1.3 1.2 norm. 1.1 1.0 IC = 50A 1.5 Eoff norm. IC = 25A 1.0 VGE = 13V 40 VGE = 11V 20 VGE = 9V 0 0 2 4 6 8 VCE 10 12 V 14 tfi 0.9 0.8 0.7 VGE = 15V 0.6 -50 -25 0 25 50 75 100 125 C 150 TVJ 0.0 0 10 20 30 IC 40 A 50 IC = 12.5A 0.5 Fig. 6 Output characteristics for braking (IGBT) 70 A 60 50 D=0.3 Fig. 7 Saturation voltage versus junction temperature normalized (IGBT) Fig. 8 Turn-off energy per pulse and fall time versus collector current, normalized (IGBT) 1.3 T =125C Eoff VJ IC = 25A tfi norm. to 4.7W 1.2 norm. 1.1 tfi 1.0 Eoff D=0.1 D=0.2 IC 40 30 20 10 D=0.4 D=0.5 D=0.7 TH = 80C 0 0.0001 0.9 0.001 0.01 0.1 1 tp s 10 0 20 40 RG 60 80 W 100 Fig. 9 Collector current versus pulse width and duty cycle (IGBT) Fig.10 Turn-off energy per pulse and fall time versus RG (IGBT) (c) 2000 IXYS All rights reserved 3-4 VUB 60 100 A 40 A 35 IF 30 25 20 TVJ=150C 1 15 10 TVJ=125C 0.1 0 RG=4.7W 400 800 VCE 1200 V TVJ=25C 5 0 0 1 2 VF 3 V 4 0.5 0.0 1 10 100 A/ms 1000 -diF/dt 1.0 max. typ. 3.0 mC 2.5 Qrr 2.0 1.5 TVJ=100C VR= 540 V IF = 11 A IF = 22 A IF = 11 A IF = 5.5 A IC 10 Fig.11 Reverse biased safe operation area (IGBT) Fig. 12 Forward current versus voltage drop (Fast Diode) Fig. 13 Recovery charge versus -diF/dt (Fast Diode) 30 A 25 20 15 10 5 100 V 80 VFR 60 TVJ=125C IF =11A 40 VFR 5 1.0 ms 4 trr 3 ms 0.8 TVJ=100C VR= 540 V TVJ=100C VR= 540 V max. IF = 11 A IF = 22 A IF = 11 A IF = 5.5 A typ. max. 0.6 IF = 11 A IF = 22 A IF = 11 A IF = 5.5 A IRM 2 0.4 20 tFR 1 tFR 0 500 0.2 typ. 0.0 0 100 200 300 A/ms 400 -diF/dt 0 0 100 200 300 -diF/dt A/ms 400 0 0 100 200 300 A/ms 400 -diF/dt Fig.14 Peak forward voltage and recovery time versus -diF/dt (Fast Diode) 1.4 1.2 1.0 Kf IRM Fig.15 Recovery time versus -diF/dt (Fast Diode) Fig.16 Peak reverse current versus -diF/dt (Fast Diode) 3.5 K/W 3.0 2.5 2.0 1.5 QR 1.0 0.5 0.0 0.001 per Rectifier Diode IGBT Fast Diode ZthJH 0.8 0.6 0.4 0.2 0.0 0 40 80 TVJ 120 C 160 0.01 0.1 1 10 t s 100 Fig.17 Dynamic parameters versus junction temperature (Fast Diode) Fig.18 Transient thermal impedance junction to heatsink ZthJH (c) 2000 IXYS All rights reserved 4-4 |
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